IGC3.2T single-phase half-bridge high-power IGBT gate driver board

 

I. Overview
The IGC3.2T single-phase half-bridge high-power IGBT gate driver board is the first modified design based on the opinions of the majority of users on the second-generation IGBT gate driver board developed by our company-the IGC2.2 driver board. Third-generation IGBT gate driver board. It applies the national "Eighth Five-Year Plan" research results, with the self-protected IGBT gate drive thick film integrated circuit HL403B as the core unit, and a pair of push-pull circuits composed of PNP and NPN transistors are added to the HL403B pulse output terminal to expand its Output pulse current, so that the peak value of output drive current can reach \6A, and it is developed and produced by externally equipped with high-performance electronic components.

The main design features are as follows:
1. Three independent power supplies work, and two AC 20V/0.1A and one DC 15V/0.1A power supplies with independent potentials are required when working. The dual AC 20V is used to drive the two IGBT gates in the single-phase half-bridge system. The power supply, and the DC 15V power supply and the user system pulse forming part are the same power supply.
2. It can be used for direct gate drive of dual-cell IGBT modules with a rated capacity of 600A/1200V or less.
   3. It has the dual protection functions of gate voltage drop and soft turn-off. It can output an alarm signal while soft turn-off and gate voltage drop. It can be used to block the output of the pulse forming part of the user, and it can also give a contact signal for the user to use To break the main circuit of your own system.
   4. The gate voltage drop delay time, gate voltage drop time and soft turn-off slope can all be adjusted by an external capacitor, so it is suitable for driving and protecting IGBTs with different saturation voltage drops.

II. Component layout and usage
   The component layout of the IGC3.2T single-phase half-bridge high-power IGBT gate driver board is roughly similar to the component layout of the IGC3.4T driver board, and will not be repeated here. The printed board has four mounting holes, the mounting holes are 4-Ф5. There are four connectors for its connection with the outside.
   The external lead function and usage of each connector are as follows:
1. The a1 and b1 of the connector S1 are connected to a 20V winding on the secondary side of the power transformer, and a 28V DC voltage with floating ground potential can also be input directly from the two ends, and the G1, C1, and E1 are respectively connected to drive two The gate, collector and emitter of the IGBT corresponding to the input pulse signal g1 in the high-power IGBT.
2. The a2 and b2 of the connector S2 are connected to another 20V winding on the secondary side of the power transformer, and a 28V DC voltage with floating ground potential can also be input directly from the two ends, and G2, C2, and E2 are respectively connected to be driven two The gate, collector and emitter of the IGBT corresponding to the input pulse signal g2 among the high-power IGBTs.
   3. The +V, GND, g1, and g2 in the connector S3 are respectively connected to the working power supply of the user system, the reference ground of the positive power supply and two driving pulse signals, and the F terminal is the sealed pulse signal provided to the user system after protection. The signal can be directly used to block the output of the pulse forming part.
   4. There is a normally closed contact between the two A and B terminals of the connector S4. This contact is used to output a signal for breaking the main circuit of the user system when the driven IGBT is overcurrent or other fault conditions are protected.

Three, parameter restrictions and usage precautions
1. Input and output load capacity
   (1) The current output by each drive unit of the IGC3.2T single-phase half-bridge IGBT gate drive board can directly drive an IGBT module with a nominal capacity of 600A/1200V.
   (2) Each drive circuit in the IGC3.2T single-phase half-bridge IGBT gate drive board draws 100mA from the grid, and it requires that the current value provided by DC+V does not exceed 100mA.
   (3) The protective relay contact capacity provided by the control board to the user is AC 380V/0.5A or 220V/1A.

   2. Application Notes
   (1) It is necessary to prevent G1 and G2 connected to the gate of the IGBT and E1 and E2 connected to the emitter from short-circuiting each other in the driving signal output by the driver board.
(2) In order to avoid interference, it is recommended that the lead wires between the power supply and the socket of the drive board and between the output of the drive board and the driven IGBT should be as short as possible, and the length should not exceed 0.5m, and use stranded wire or the same as possible. Shaft cable shielded wire.
(3) When the driver board is used in a single-phase full-bridge inverter system, in order to avoid direct connection, it is recommended to increase the interlock time interval between g1, g3, g2, and g4 in the driving pulse forming part of the user system. Generally, it is 1゛5μS.